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The biennial conference series on Extended Defects in Semiconductors started with a meeting in Hünfeld, Germany, in 1978. Subsequent meetings took place in France, Greece, Great Britain, Germany, Italy, Poland, and Russia. EDS conferences are known for excellent presentations and lively discussions in a stimulating scientific atmosphere. 

Previous conferences are listed here

Scope and Topics

Scope of the conference

Semiconductors have become a cornerstone of today's economy, and are thought to remain so in the future, with extended applications in energy production, conversion and storage, as well as lighting and data transmission.

This development relies both on the improvement of today's processing techniques for known intelligent technologies (IT - mainly Si-based) but also on the development of new materials such as GaN diodes (laser and LEDs), Diamond or SiC (power electronics), III-V and II-VI materials (opto-electronic components) and Graphene, and 2D materials (next generation semiconductors)….

One of the key factor in establishing or not such development is the ability to produce defect-free substrates or structures to make them compatible with large-scale production technologies.

The scope of the Extended Defects in Semiconductors (EDS) Conference is to bring together experts on fundamental and applied research to establish a state of the art evaluation of the studies about individual defect and microstructures in semiconductors. This will be done both through the viewpoints of characterization techniques (X-Ray, Transmission and Scanning Electron Microscopy, Ion Microscopy, Infra Red Microscopy, Neutrons…..), simulation methods (Molecular Dynamics, Ab Initio, Finite Elements…) and theoretical approaches. 


  • Materials for solar energy conversion and energy storage
  • Thin films and heterostructures
  • Low-dimensional systems and related defects: 2D semiconductor (graphene, MoS2,…), nanocrystals, nanowires, quantum wells, quantum dots,
  • Interface structures and defect interaction
  • Doping-, irradiation-, and implantation-induced defects
  • Electronic structure of defects
  • Defect engineering, strain engineering
  • Mechanical properties and dislocation dynamics
  • Role of defects in opto-electronic and magnetic properties
  • Degradation mechanisms in semiconductor devices
  • Atomistic and multiscale simulations, modeling approaches of defects, interfaces and nanostructures
  • Advanced characterization techniques and methods, in-situ imaging and analysis
  • Interaction of point and extended defects, point defect agglomeration


Invited Speakers

Confirmed invited speakers

Martin ALBRECHT, Leibniz-Institut für Kristallzüchtung, Berlin, Germany (in memory of Horst STRUNK)

Jan BAUER, Max Planck Institute of Microstructure Physics, Halle, Germany

Sandrine BROCHARD, Institut P Prime, Poitiers, France 

Karolin JIPTNER,  Yamagata University, Japan 

Sneha RHODE, Imperial College London, England

Heike RIEL, IBM research Rüschilikon, Switzerland

Lorenzo RIGUTTI, Université de Rouen, France

Alexandre TALLAIRE, LSPM, Université Paris 13, France

Maria TSOUTSOUVA, IM2NP, Université de Marseille-AIx en Provence, France

Cynthia VOLKERT, Institut für Materialphysik, Universität Göttingen, Germany

Jeffrey WHEELER, Swiss Federal Institute of Technology (ETH), Zurich, Switzerland 

Ichiro YONENAGA,  Tohoku University, Sendai, Japan (in memory of Takayoshi SUZUKI)

Oleg YAZYEV, Ecole Polytechnique Fédérale de Lausanne, Switzerland



The conference will be held at "La gaillarde", Les Issambres, near St Raphael, in the south of France


Practical informations and contact

Abstract submission is opened till April 29th.

Please note that the abstract template can be found at the 3rd step of the submission procedure as shown in the screen copy below :












Registration will be opened from May 15th, 2016 to July 15th, 2016

Program will be posted early May 2016



Articles will be processed in a special issue of Materials Today Proceedings. They will undergo a regular reviewing process. Publication of the special issue is targeting the first months of 2017. A hard deadline for submission will be set one month after the end of the conference. Open access will be available for authors at a cost of $125.

Registration fees will be all-inclusive (meals and rooms, on site):

  • € 700 Regular registration (single room)
  • € 480 Student registration (double room)
  • Accompanying person (not participating in the scientfic program) can register at the student registration rate (meal and room)-Please notify organisers before June 15th.
  • Room with double bed (twin or queen size) have to be booked before June 15th. They will be given on a first booked-first served basis.


Poster boards:

  • Poster boards will be available as 2m high by 1m wide grids. The best poster format is A0 in portrait orientation



Registration deadline extended

Due to delayed VISA procedures the registration deadline has been extended till August 20th, 2016. After this date, late registrations are absolutely not guaranteed as the room count of the conference site will be closed. 

As a reminder, the registration to the conference includes the nights and meals from Sun 25th to Friday 30th morning.

To register, go to the Conference Registration & Payment tab.

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